Datasheet > FJB5555TM

FJB5555TM

更新时间： 2023-09-03 20:40:22

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
8页	314K
描述
NPN 硅晶体管

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数据手册

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FJB5555TM 数据手册

Electrical Characteristics⁽³⁾

Values are at T_A= 25°C unless otherwise noted.

Symbol

BV_CBO

BV_CEO

BV_EBO

Parameter

Conditions

Min.

1050

400

Typ.

Max. Units

Collector-Base Breakdown Voltage

I_C= 500 μA, I_E= 0

Collector-Emitter Breakdown Voltage I_C= 5 mA, I_B= 0

Emitter-Base Breakdown Voltage

I_E= 500 μA, I_C= 0

V_CE= 5 V, I_C= 10 mA

h_FE

DC Current Gain

V_CE= 3 V, I_C= 0.8 A

I_C= 1 A, I_B= 0.2 A

I_C= 3.5 A, I_B= 1.0 A

V_CB= 10 V, f = 1 MHz

0.17

0.50

1.5

_CE(sat)

Collector-Emitter Saturation Voltage

_BE(sat)

C_ob

t_ON

Base-Emitter Saturation Voltage

Output Capacitance

Turn-On Time

1.2

μs

1.0

1.2

V_CC= 125 V, I_C= 0.5 A,

t_STG

t_F

Storage Time

I_B1= 45 mA, I_B2= -0.5 A,

R_L= 250 Ω

Fall Time

0.3

t_ON

Turn-On Time

2.0

2.5

0.3

V_CC= 250 V, I_C= 2.5 A,

t_STG

t_F

Storage Time

I_B1= 0.5 A, I_B2= -1.0 A,

R_L= 100 Ω

Fall Time

EAS

Avalanche Energy

L = 2 mH

Note:

3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Rev. 1.1.0

www.fairchildsemi.com

1 234 5 6 7 8

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