Datasheet > FF2000XTR17IE5

FF2000XTR17IE5

更新时间： 2024-04-09 19:00:11

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英飞凌 - INFINEON		/
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FF2000XTR17IE5 数据手册

FF2000XTR17IE5

™

PrimePACK 3+ B-series module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

I_CRMt_plimited by T_{vj op}

Parameter

Values

Unit

Repetitive peak collector

current

4000

Gate-emitter peak voltage

V_GES

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.90

2.30

2.45

5.80

8.5

Unit

Min.

Max.

2.27

2.64

2.82

6.25

Collector-emitter

saturation voltage

V_{CE sat}I_C= 2000 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 72 mA, V_CE= V_GE, T_vj= 25 °C

5.35

V_GE= 15 V, V_CC=900 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

0.75

101

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

Reverse transfer

capacitance

C_res

3.5

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 1700 V, V_GE= 0 V

T_vj= 125 °C

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

400

Turn-on delay time

(inductive load)

I_C= 2000 A, V_CC= 900 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.3 Ω

0.285

0.300

0.310

0.160

0.175

0.185

0.765

0.875

0.925

0.115

0.270

0.385

335

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 2000 A, V_CC= 900 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.3 Ω

µs

T_vj= 125 °C

T_vj= 175 °C

Turn-oﬀ delay time

(inductive load)

I_C= 2000 A, V_CC= 900 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.1 Ω

T_vj= 125 °C

T_vj= 175 °C

Fall time (inductive load)

I_C= 2000 A, V_CC= 900 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.1 Ω

µs

T_vj= 125 °C

T_vj= 175 °C

Turn-on energy loss per

pulse

E_on

I_C= 2000 A, V_CC= 900 V, T_vj= 25 °C

L = 30 nH, V_GE= 15 V,

T_vj= 125 °C

485

R_Gon= 0.3 Ω, di/dt =

T_vj= 175 °C

575

10700 A/µs (T_vj= 175 °C)

(table continues...)

Datasheet

Revision 1.00

2023-05-31

1 2 345 6 7...16

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