型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FF200R12KE3 | EUPEC | IGBT-Module |
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FF200R12KE3 | INFINEON | 62 mm 1200 V, 200 A 双 IGBT 模块, 采用第三代沟槽/场终止IGB |
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FF200R12KE4 | INFINEON | 62 mm 1200 V, 200 A dual IGBT module?with?TRENCHSTOP? IGBT4 and emitter controlled diode. |
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FF200R12KE4HOSA1 | INFINEON | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 |
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FF200R12KE4P | INFINEON | Insulated Gate Bipolar Transistor, |
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FF200R12KF | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 |
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