Datasheet > FESB8AT-HE3/45

FESB8AT-HE3/45

更新时间： 2024-11-07 06:27:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	130K
描述
DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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FESB8AT-HE3/45 数据手册

FES(F,B)8AT thru FES(F,B)8JT

Vishay General Semiconductor

Ultrafast Plastic Rectifier

FEATURES

TO-220AC

ITO-220AC

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

FES8xT

FESF8xT

PIN 1

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

CASE

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

FESB8xT

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

8.0 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meests JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_RRM

I_FSM

t_rr

50 V to 600 V

125 A

35 ns, 50 ns

V_F

0.95 V, 1.30 V, 1.50 V

150 °C

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

FES

8AT

FES

8BT

FES

8CT

FES

8DT

FES

8FT

FES

8GT

FES

8HT

FES

8JT

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum DC blocking voltage

100

Maximum average forward rectified current

at T_C= 100 °C

I_F(AV)

8.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

T_J, T_STG

V_AC

125

°C

Operating storage and temperature range

- 55 to + 150

1500

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

Document Number: 88600

Revision: 07-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与FESB8AT-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
FESB8ATHE3/81	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
FESB8AT-HE3/81	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
FESB8ATN	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-263AB, PLASTIC, D2PAK-3
FESB8ATN-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO
FESB8BT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FESB8BT/31	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 100V V(RRM)
FESB8BT/81	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 100V V(RRM)
FESB8BT-E3/45	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FESB8BT-E3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FESB8BT-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, D

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