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FESB8CTHE3/45 PDF预览

FESB8CTHE3/45

更新时间: 2024-01-24 19:14:20
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
5页 137K
描述
DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

FESB8CTHE3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.26
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:150 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

FESB8CTHE3/45 数据手册

 浏览型号FESB8CTHE3/45的Datasheet PDF文件第2页浏览型号FESB8CTHE3/45的Datasheet PDF文件第3页浏览型号FESB8CTHE3/45的Datasheet PDF文件第4页浏览型号FESB8CTHE3/45的Datasheet PDF文件第5页 
FES(F,B)8AT thru FES(F,B)8JT  
Vishay General Semiconductor  
Ultrafast Plastic Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low leakage current  
• High forward surge capability  
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
FES8xT  
FESF8xT  
PIN 1  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
1
FESB8xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
8.0 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meests JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
50 V to 600 V  
125 A  
35 ns, 50 ns  
VF  
0.95 V, 1.30 V, 1.50 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
FES  
8AT  
FES  
8BT  
FES  
8CT  
FES  
8DT  
FES  
8FT  
FES  
8GT  
FES  
8HT  
FES  
8JT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
at TC = 100 °C  
IF(AV)  
8.0  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
125  
A
°C  
V
Operating storage and temperature range  
- 55 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Document Number: 88600  
Revision: 07-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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