Datasheet > FDS222T1G

FDS222T1G

更新时间： 2024-10-31 02:51:51

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
4页	106K
描述
Common Cathode Silicon Dual Switching Diode

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FDS222T1G 数据手册

SEMICONDUCTOR

TECHNICAL DATA

FDS222

Common Cathode Silicon

Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is

designed for use in ultra high speed switching applications. This

device is housed in the SC–89 package which is designed for low

power surface mount applications, where board space is at a premium.

• Fast t

• Low C_D

• Available in 8 mm Tape and Reel

SC-89

MAXIMUM RATINGS (T = 25 °C)

ANODE

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

CATHODE

ANODE

Peak Reverse Voltage

Forward Current

Vdc

100

300

2.0

mAdc

Adc

Peak Forward Current

Peak Forward Surge Current

(1)

FSM

THERMAL CHARACTERISTICS

Rating

Power Dissipation

Symbol

Max

150

Unit

Junction Temperature

Storage Temperature Range

1. t = 1 µS

150

stg

–55 to +150

(T = 25 C)

ELECTRICAL CHARACTERISTICS

Characteristic

Reverse Voltage Leakage Current

Forward Voltage

Symbol

Condition

Min

Max

0.1

1.2

—

Unit

µAdc

= 70 V

—

= 100 mA

I = 100 µA

Vdc

Reverse Breakdown Voltage

Diode Capacitance

= 6.0 V, f = 1.0 MHz

3.5

4.0

Reverse Recovery Time

t (2)

= 5.0 mA, V = 6.0 V, R = 100 Ω, I = 0.1 I

2. t Test Circuit on following page.

Driver Marking

FDS222T1G=N

Ordering Information

Device

Marking

Shipping

FDS222T1G

3000/Tape&Reel

FDS222T3G

10000/Tape&Reel

2008. 4. 23

1/3

Revision No : 0

12 3 4

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