Datasheet > FDR501UT3G

FDR501UT3G

更新时间： 2024-10-31 02:51:51

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	172K
描述
Surface Mount Schotty Diode

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中文翻译

获取价格

数据手册

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FDR501UT3G 数据手册

SEMICONDUCTOR

FDR501U

TECHNICAL DATA

Surface Mount Schotty Diode

Applications

Low current rectification

Features

1) Small surface mounting type.

2) High reliability.

Construction

Silicon epitaxial planar

SC-76 / SOD-323

Device marking and ordering information

Device

Marking

Shipping

FDR501UT1G

3000/Tape&Reel

CATHODE

ANODE

FDR501UT3G

10000/Tape&Reel

Absolute maximum ratings (Ta = 25°C)

Parameter

Peak reverse voltage

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

�60 Hz for 1

Symbol

Limits

Unit

0.1

�

IFSM

125

Tstg

−40

+125

Electrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Symbol

Min.

−

Typ.

Max.

0.55

0.34

Unit

Conditions

VF1

−

=100mA

=10mA

Forward voltage

VF2

−

Reverse current

−

µA

=10V

=10V, f=1MHz

Capacitance between terminals

Note) ESD sensitive product handling required.

−

6.0

−

2009. 7. 28

Revision No : 1

1/3

12 3

中文翻译

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