Datasheet > FDP86363_F085

FDP86363_F085

更新时间： 2024-09-26 01:10:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	474K
描述
N-Channel PowerTrench MOSFET

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FDP86363_F085 数据手册

June 2014

FDP86363_F085

N-Channel PowerTrench MOSFET

80 V, 110 A, 2.8 mΩ

Features

Typical R

= 2.4 mΩ at V = 10V, I = 80 A

GS D

DS(on)

Typical Q

= 131 nC at V = 10V, I = 80 A

g(tot)

UIS Capability

RoHS Compliant

Qualified to AEC Q101

Applications

For current package drawing, please refer to the Fairchild

website at www.fairchildsemi.com/packaging

Automotive Engine Control

PowerTrain Management

Solenoid and Motor Drivers

Integrated Starter/Alternator

Primary Switch for 12V Systems

MOSFET Maximum Ratings T_J= 25°C unless otherwise noted.

Symbol

V_DSS

Parameter

Ratings

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±20

Drain Current - Continuous (V_GS=10) (Note 1)

Pulsed Drain Current

T_C= 25°C

110

See Figure 4

512

I_D

E_AS

P_D

Single Pulse Avalanche Energy

(Note 2)

(Note 3)

W/^oC

^oC

^oC/W

Power Dissipation

Derate Above 25^oC

300

2.0

T_J, T_STGOperating and Storage Temperature

-55 to + 175

0.5

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Maximum Thermal Resistance, Junction to Ambient

Notes:

1: Current is limited by bondwire configuration.

2: Starting T = 25°C, L = 0.25mH, I = 64A, V = 80V during inductor charging and V = 0V during time in avalanche.

3: R

is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder

θJA

mounting surface of the drain pins.

presented here is based on mounting on a 1 in pad of 2oz copper.

is guaranteed by design, while R is determined by the board design. The maximum rating

θJC θJA

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP86363

FDP86363_F085

TO220AB

Tube

N/A

50 units

FDP86363_F085 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7

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