FDP8447L

更新时间： 2024-09-25 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	188K
描述
N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ

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数据手册

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FDP8447L 数据手册

May 2007

FDP8447L

N-Channel PowerTrench^®MOSFET

40V, 50A, 8.7mΩ

Features

General Description

Max r_DS(on)= 8.7mΩ at V_GS= 10V, I_D= 14A

Max r_DS(on)= 11.2mΩ at V_GS= 4.5V, I_D= 11A

Fast Switching

This N-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench technology to deliver

low r_DS(on)and optimized BV_DSScapability to offer superior

performance benefit in the application.

RoHS Compliant

Applications

Inverter

Power Supplies

TO-220

FDP Series

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

I_D

T_A= 25°C

(Note 1)

(Note 3)

(Note 1)

-Pulsed

100

E_AS

Drain-Source Avalanche Energy

Power Dissipation

153

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.1

°C/W

(Note 1)

62.5

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tube

Tape Width

N/A

Quantity

FDP8447L

TO-220AB

50units

FDP8447L Rev.B

www.fairchildsemi.com

12 3 4 5 6

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