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FDMA2002NZ PDF预览

FDMA2002NZ

更新时间: 2024-01-10 17:11:28
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 127K
描述
Dual N-Channel PowerTrench MOSFET

FDMA2002NZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):2.9 A
最大漏极电流 (ID):2.9 A最大漏源导通电阻:0.123 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JEDEC-95代码:MO-229VCCCJESD-30 代码:S-PDSO-N6
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMA2002NZ 数据手册

 浏览型号FDMA2002NZ的Datasheet PDF文件第1页浏览型号FDMA2002NZ的Datasheet PDF文件第3页浏览型号FDMA2002NZ的Datasheet PDF文件第4页浏览型号FDMA2002NZ的Datasheet PDF文件第5页浏览型号FDMA2002NZ的Datasheet PDF文件第6页浏览型号FDMA2002NZ的Datasheet PDF文件第7页 
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
Off Characteristics  
BVDSS  
Drain–Source Breakdown Voltage  
30  
V
VGS = 0 V,  
ID = 250 µA  
BVDSS  
TJ  
Breakdown Voltage Temperature  
Coefficient  
ID = 250 µA, Referenced to 25°C  
25  
mV/°C  
IDSS  
Zero Gate Voltage Drain Current  
Gate–Body Leakage Current  
VDS = 24 V,  
VGS = 0 V  
1
µA  
µA  
IGSS  
VGS = ± 12 V, VDS = 0 V  
±10  
On Characteristics  
VGS(th)  
Gate Threshold Voltage  
0.4  
1.0  
–3  
1.5  
V
VDS = VGS  
,
ID = 250 µA  
VGS(th)  
TJ  
Gate Threshold Voltage  
Temperature Coefficient  
ID = 250 µA, Referenced to 25°C  
mV/°C  
VGS = 4.5V, ID = 2.9A  
75  
84  
123  
140  
163  
166  
203  
268  
VGS = 3.0V, ID = 2.7A  
VGS = 2.5V, ID = 2.5A  
92  
Static Drain–Source  
On–Resistance  
RDS(on)  
mΩ  
VGS = 4.5V, ID = 2.9A, TC = 85°C  
VGS = 3.0V, ID = 2.7A, TC = 150°C  
95  
138  
150  
V
GS = 2.5V, ID = 2.5A, TC = 150°C  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
190  
30  
220  
40  
pF  
pF  
pF  
V
DS = 15 V,  
V GS = 0 V,  
Output Capacitance  
f = 1.0 MHz  
Reverse Transfer Capacitance  
20  
30  
Switching Characteristics (Note 2)  
VDD = 15 V,  
VGS = 4.5 V,  
ID = 1 A,  
RGEN = 6 Ω  
td(on)  
tr  
td(off)  
tf  
Turn–On Delay Time  
Turn–On Rise Time  
Turn–Off Delay Time  
Turn–Off Fall Time  
Total Gate Charge  
Gate–Source Charge  
Gate–Drain Charge  
6
8
12  
16  
21  
10  
3.0  
ns  
ns  
12  
ns  
2
ns  
VDS = 15 V,  
VGS = 4.5 V  
ID = 2.9 A,  
Qg  
Qgs  
Qgd  
2.4  
0.35  
0.75  
nC  
nC  
nC  
Drain–Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain–Source Diode Forward Current  
2.9  
A
V
VSD  
Drain–Source Diode Forward  
Voltage  
IS = 2.0 A  
0.9  
0.8  
10  
1.2  
1.2  
IS = 1.1 A  
trr  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
IF = 2.9 A,  
dIF/dt = 100 A/µs  
ns  
Qrr  
2
nC  
FDMA2002NZ Rev B(W)  

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