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FDD8870_NL

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
11页 202K
描述
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

FDD8870_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.36
雪崩能效等级(Eas):690 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):160 A最大漏极电流 (ID):21 A
最大漏源导通电阻:0.0044 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD8870_NL 数据手册

 浏览型号FDD8870_NL的Datasheet PDF文件第4页浏览型号FDD8870_NL的Datasheet PDF文件第5页浏览型号FDD8870_NL的Datasheet PDF文件第6页浏览型号FDD8870_NL的Datasheet PDF文件第8页浏览型号FDD8870_NL的Datasheet PDF文件第9页浏览型号FDD8870_NL的Datasheet PDF文件第10页 
Thermal Resistance vs. Mounting Pad Area  
The maximum rated junction temperature, T , and the  
thermal resistance of the heat dissipating path determines  
JM  
125  
100  
75  
R
= 33.32+ 23.84/(0.268+Area) EQ.2  
= 33.32+ 154/(1.73+Area) EQ.3  
θJA  
the maximum allowable device power dissipation, P , in an  
DM  
R
application.  
Therefore the applications ambient  
θJA  
o
o
temperature, T ( C), and thermal resistance R  
( C/W)  
A
θJA  
must be reviewed to ensure that T  
is never exceeded.  
JM  
Equation 1 mathematically represents the relationship and  
serves as the basis for establishing the rating of the part.  
(T  
T )  
JM  
A
(EQ. 1)  
P
= -----------------------------  
50  
DM  
RθJA  
In using surface mount devices such as the TO-252  
package, the environment in which it is applied will have a  
significant influence on the parts current and maximum  
25  
0.01  
(0.0645)  
0.1  
(0.645)  
1
10  
(6.45)  
(64.5)  
power dissipation ratings. Precise determination of P  
complex and influenced by many factors:  
is  
DM  
2
2
AREA, TOP COPPER AREA in (cm )  
Figure 21. Thermal Resistance vs Mounting  
Pad Area  
1. Mounting pad area onto which the device is attached and  
whether there is copper on one side or both sides of the  
board.  
2. The number of copper layers and the thickness of the  
board.  
3. The use of external heat sinks.  
4. The use of thermal vias.  
5. Air flow and board orientation.  
6. For non steady state applications, the pulse width, the  
duty cycle and the transient thermal response of the part,  
the board and the environment they are in.  
Fairchild provides thermal information to assist the  
designers preliminary application evaluation. Figure 21  
defines the R  
for the device as a function of the top  
θJA  
copper (component side) area. This is for a horizontally  
positioned FR-4 board with 1oz copper after 1000 seconds  
of steady state power with no air flow. This graph provides  
the necessary information for calculation of the steady state  
junction temperature or power dissipation. Pulse  
applications can be evaluated using the Fairchild device  
Spice thermal model or manually utilizing the normalized  
maximum transient thermal impedance curve.  
Thermal resistances corresponding to other copper areas  
can be obtained from Figure 21 or by calculation using  
Equation 2 or 3. Equation 2 is used for copper area defined  
in inches square and equation 3 is for area in centimeters  
square. The area, in square inches or square centimeters is  
the top copper area including the gate and source pads.  
23.84  
(0.268 + Area)  
R
= 33.32 + ------------------------------------  
(EQ. 2)  
θJA  
θJA  
Area in Inches Squared  
154  
R
= 33.32 + ---------------------------------  
(EQ. 3)  
(1.73 + Area)  
Area in Centimeters Squared  
©2004 Fairchild Semiconductor Corporation  
FDD8870 / FDU8870 Rev. C1  

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