Datasheet > FDD8778

FDD8778

更新时间： 2023-09-03 20:32:10

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	591K
描述
N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ

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中文翻译

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数据手册

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FDD8778 数据手册

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

2000

1000

f = 1MHz

= 0V

iss

oss

= 13V

= 10V

= 16V

rss

100

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

V =10V

T_J= 25^oC

T_J= 125^oC

T_J= 150^oC

V =4.5V

θJC

= 3.8^oC/W

1E-3

100

125

150

175

0.01

0.1

100

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain Current vs

Case Temperature

400

5000

= 25 C

V_GS= 10V

10us

FOR TEMPERATURES

100

ABOVE 25 C DERATE PEAK

1000

100

CURRENT AS FOLLOWS:

100us

175 – T

I = I

----------------------

150

LIMITED BY

PACKAGE

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

= 25^OC

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

0.1

t, PULSE WIDTH (s)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

FDD8778/FDU8778 Rev. 1.2

www.fairchildsemi.com

1 2 3 456 7 8

中文翻译

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