Datasheet > FDD8778

FDD8778

更新时间： 2023-09-03 20:32:10

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	591K
描述
N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDD8778 数据手册

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 3.0V

= 4.0V

V_GS= 3.5V

= 10V

= 5.0V

= 4.5V

V_GS= 4.5V

V_GS= 4V

= 3.5V

= 3V

V_GS= 5V

V_GS= 10V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I_D, DRAIN CURRENT(A)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 35A

= 10V

= 175^oC

= 25^oC

-80

-40

120

160

200

3.0

4.5

6.0

7.5

9.0

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction

Temperature

Figure 4. On-Resistance vs Gate to Source

Voltage

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 0V

= 5V

= 175^oC

= 25^oC

0.1

= 175^oC

= 25^oC

0.01

= -55^oC

1.0

= - 55^oC

3.5

1E-3

1.0

1.5

2.0

2.5

3.0

4.0

4.5

5.0

0.0

0.2

0.4

0.6

0.8

1.2

1.4

V_GS, GATE TO SOURCE VOLTAGE (V)

V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward

Voltage vs Source Current

FDD8778/FDU8778 Rev. 1.2

www.fairchildsemi.com

1 2 345 6 7 8

中文翻译

下载PDF

与FDD8778相关器件

型号	品牌	获取价格	描述	数据表
FDD8780	FAIRCHILD	获取价格	N-Channel PowerTrench? MOSFET 25V, 35A, 8.5mOhm
FDD8780	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，35A，8.5mΩ
FDD8780	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时
FDD8780-G	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDD8782	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDD8782	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，35A，11mΩ
FDD8796	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 25V, 35A, 5.7mO
FDD8796	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，35A，5.7mΩ
FDD8796	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时
FDD8870	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET