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FDC3512L99Z PDF预览

FDC3512L99Z

更新时间: 2024-02-25 02:31:33
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 133K
描述
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

FDC3512L99Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):3 A
最大漏源导通电阻:0.077 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC3512L99Z 数据手册

 浏览型号FDC3512L99Z的Datasheet PDF文件第1页浏览型号FDC3512L99Z的Datasheet PDF文件第2页浏览型号FDC3512L99Z的Datasheet PDF文件第4页浏览型号FDC3512L99Z的Datasheet PDF文件第5页 
Typical Characteristics  
1.8  
1.6  
1.4  
1.2  
1
20  
VGS = 10V  
5.0V  
6.0V  
4.5V  
VGS = 4.0V  
15  
10  
5
4.5V  
4.0V  
5.0V  
6.0V  
10V  
15  
0.8  
0
0
5
10  
ID, DRAIN CURRENT (A)  
20  
0
1
2
3
4
5
175  
5
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage.  
0.18  
0.14  
0.1  
2.5  
2.2  
1.9  
1.6  
1.3  
1
ID = 1.5 A  
ID = 3.0A  
VGS =10V  
TA = 125oC  
TA = 25oC  
0.06  
0.02  
0.7  
0.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
100  
20  
15  
10  
5
VGS = 0V  
VDS = 5V  
10  
TA = 125oC  
1
25oC  
0.1  
-55oC  
TA = 125oC  
0.01  
0.001  
25oC  
-55oC  
0.0001  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDC3512 Rev B2(W)  

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