Datasheet > FDAF69N25

FDAF69N25

更新时间： 2024-11-13 22:20:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
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描述
250V N-Channel MOSFET

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FDAF69N25 数据手册

September 2005

UniFET

FDAF69N25

250V N-Channel MOSFET

Features

Description

•

34A, 250V, R

= 0.041Ω @V = 10 V

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

DS(on)

Low gate charge ( typical 77 nC)

Low Crss ( typical 84 pF)

Fast switching

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switching DC/DC converters and switched mode power

supplies.

Improved dv/dt capability

{

ꢀ ꢁ

G_{

TO-3PF

FQAF Series

{

D S

Absolute Maximum Ratings

Symbol

Parameter

FDAF69N25

Unit

Drain-Source Voltage

Repetitive Avalanche Voltage

250

300

DSS

(Note 1)

(Note 2)

DS(Avalanche)

Drain Current

- Continuous (T = 25°C)

21.5

- Continuous (T = 100°C)

(Note 1)

(Note 2)

Drain Current

- Pulsed

136

Gate-Source Voltage

GSS

Single Pulsed Avalanche Energy

Avalanche Current

1894

(Note 1)

(Note 3)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

11.5

4.5

V/ns

dv/dt

Power Dissipation

(T = 25°C)

115

- Derate above 25°C

0.93

W/°C

Operating and Storage Temperature Range

-55 to +150

300

°C

J, STG

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

1.08

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

θJC

θCS

θJA

Thermal Resistance, Junction-to-Ambient

FDAF69N25 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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