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FCX617 PDF预览

FCX617

更新时间: 2024-11-20 10:31:59
品牌 Logo 应用领域
美台 - DIODES 晶体开关小信号双极晶体管
页数 文件大小 规格书
3页 76K
描述
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

FCX617 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

FCX617 数据手册

 浏览型号FCX617的Datasheet PDF文件第2页浏览型号FCX617的Datasheet PDF文件第3页 
SOT89 NPN SILICON POWER  
FCX617  
(SWITCHING) TRANSISTOR  
ISSSUE 1 - NOVEMBER 1998  
FEATURES  
*
*
*
*
*
2W POWER DISSIPATION  
C
12A Peak Pulse Current  
Excellent HFE Characteristics up to 12 Amps  
Extremely Low Saturation Voltage E.g. 8mv Typ.  
Extremely Low Equivalent On-resistance;  
R
CE(sat) 50mat 3A  
E
C
B
Partmarking Detail -  
617  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
15  
5
V
V
Peak Pulse Current **  
12  
3
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
500  
mA  
Power Dissipation at Tamb=25°C  
Ptot  
1 †  
2 ‡  
W
W
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
recommended Ptot calculated using FR4 measuring 15x15x0.6mm  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by  
other suppliers.  
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices  
Refer to the handling instructions for soldering surface mount components.  

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