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FCX491Q

更新时间: 2024-11-26 13:45:39
品牌 Logo 应用领域
美台 - DIODES 小信号双极晶体管
页数 文件大小 规格书
1页 17K
描述
NPN, 60V, 1A, SOT89

FCX491Q 数据手册

  
SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FCX491  
ISSUE 3 - OCTOBER 1995  
FEATURES  
*
*
*
60 Volt VCEO  
1 Am p continuous current  
C
P
tot= 1 Watt  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FCX591  
N1  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Em itter Voltage  
60  
V
Em itter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
A
ICM  
2
A
Power Dissipation at Tam b=25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
1
W
°C  
Tj:Tstg  
-65 to +150  
= 25°C).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
80  
V
IC=100µA  
IC=10m A*  
IE=100µA  
VCB=60V,  
VCE=60V  
VEB=4V  
60  
5
V
V
Collector Cut-Off Currents  
Em itter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
ICES  
IEBO  
Collector-Em itter  
Saturation Voltage  
VCE(sat)  
0.25  
0.50  
V
V
IC=500m A, IB=50m A*  
IC=1A, IB=100m A*  
Base-Em itter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=1A, IB=100m A*  
Base-Em itter  
Turn On Voltage  
1.0  
V
IC=1A, VCE=5V*  
Static Forward Current  
Transfer Ratio  
100  
100  
80  
IC=1m A, VCE=5V  
IC=500m A, VCE=5V*  
IC=1A, VCE=5V*  
IC=2A, VCE=5V*  
300  
10  
30  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50m A, VCE=10V  
f=100MHz  
Collector-Base  
Cobo  
VCB=10V, f=1MHz  
Breakdown Voltage  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical Characteristics graphs see FMMT491 datasheet  
3 - 86  

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