FCX491Q

更新时间： 2024-09-17 13:45:39

品牌	Logo	应用领域
美台 - DIODES		小信号双极晶体管
页数	文件大小	规格书
1页	17K
描述
NPN, 60V, 1A, SOT89

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数据手册

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FCX491Q 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

FCX491

ISSUE 3 - OCTOBER 1995

✪

FEATURES

60 Volt V_CEO

1 Am p continuous current

_tot= 1 Watt

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

FCX591

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Continuous Collector Current

Peak Pulse Current

I_CM

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

°C

T_j:T_stg

-65 to +150

= 25°C).

am b

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V_(BR)CBO

V_CEO(sus)

V_(BR)EBO

I_CBO

I_C=100µA

I_C=10m A*

I_E=100µA

V_CB=60V,

VCE=60V

V_EB=4V

Collector Cut-Off Currents

Em itter Cut-Off Current

100

I_CES

I_EBO

Collector-Em itter

Saturation Voltage

V_CE(sat)

0.25

0.50

I_C=500m A, I_B=50m A*

I_C=1A, I_B=100m A*

Base-Em itter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

1.1

I_C=1A, I_B=100m A*

Base-Em itter

Turn On Voltage

1.0

I_C=1A, V_CE=5V*

Static Forward Current

Transfer Ratio

100

I_C=1m A, V_CE=5V

I_C=500m A, V_CE=5V*

I_C=1A, V_CE=5V*

I_C=2A, V_CE=5V*

300

Transition Frequency

f_T

150

MHz

I_C=50m A, V_CE=10V

f=100MHz

Collector-Base

C_obo

V_CB=10V, f=1MHz

Breakdown Voltage

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT491 datasheet

3 - 86

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