Datasheet > FCX493U

FCX493U

更新时间： 2024-11-26 14:53:31

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	244K
描述
功率三极管

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中文翻译

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数据手册

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FCX493U 数据手册

FCX493U

NPN Silicon Epitaxial Planar Power Transistor

Features

• Low Collector Emitter Saturation Voltage

Applications

• For driver stages of audio / video amplifiers

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

120

Collector Emitter Voltage

Emitter Base Voltage

100

Collector Current

Peak Pulse Collector Current

Base Current

Total Power Dissipation ¹⁾

I_CM

I_B

200

℃

P_tot

Operating Junction and Storage Temperature Range

T_j,T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 08/05/2023 Rev: 03

12 3 4 5

中文翻译

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