Datasheet > FCX495_07

FCX495_07

更新时间： 2024-11-21 03:36:19

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管
页数	文件大小	规格书
6页	276K
描述
SOT89 NPN silicon planar high voltage transistor

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中文翻译

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数据手册

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FCX495_07 数据手册

FCX495

SOT89 NPN silicon planar high voltage transistor

Features

•

150 Volt V

CEO

1 Amp continuous current

Device marking

N95

Pinout - top view

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Collector-base voltage

170

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Peak pulse current

150

EBO

I_C

I_CM

Base current

200

°C

Power dissipation at T

= 25°C

tot

amb

Operating and storage temperature range

T :T

-65 to +150

stg

Electrical characteristics (at T

Parameter

= 25°C)

amb

Symbol

Min. Max. Unit Conditions

Breakdown voltages

170

I =100µA

(BR)CBO

CEO(sus)

(*)

150

I =10mA

I =100µA

(BR)EBO

Collector cut-off currents

Emitter cut-off current

, I

100

0.2

=150V, V =150V

CBO CES

=4V

EBO

(*)

Emitter saturation voltages

I =250mA, I =25mA

CE(sat)

0.3

1.0

300

I =500mA, I =50mA

BE(sat)

BE(on)

Base-emitter turn on voltage

I =500mA, V =10V

Static forward current transfer

ratio

100

I =1mA, V =10V

C CE

(*)

I =250mA, V =10V

I =500mA, V =10V

(*)

I =1A, V =10V

Transition frequency

100

MHz I =50mA, V =10V

f=100MHz

Collector-base breakdown voltage

=10V, f=1MHz

obo

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%

Issue 4 - May 2007

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