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FCX493

更新时间: 2024-11-20 22:31:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
1页 20K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FCX493 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.26Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
基于收集器的最大容量:10 pF集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:0.6 VBase Number Matches:1

FCX493 数据手册

  
SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FCX493  
ISSUE 3 - NOVEMBER 1995  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FCX593  
N93  
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
Collector-Em itter Voltage  
100  
V
Em itter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
A
ICM  
2
A
Base Current  
IB  
200  
1
m A  
W
Power Dissipation at Tam b=25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
-65 to +150  
°C  
= 25°C).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=100µA  
IC=10m A*  
IE=100µA  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
120  
100  
5
V
V
Collector Cut-Off Currents  
Em itter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
VCB=100V  
VCES=100V  
VEB=4V  
ICES  
IEBO  
Collector-Em itter  
Saturation Voltage  
VCE(sat)  
0.3  
0.6  
V
V
IC=500m A, IB=50m A  
IC=1A, IB=100m A  
Base-Em itter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.15  
V
IC=1A, IB=100m A  
Base-Em itter  
Turn On Voltage  
1.0  
V
IC=1A, VCE=10V  
Static Forward Current  
Transfer Ratio  
100  
100  
60  
IC=1m A, VCE=10V*  
IC=250m A, VCE=10V*  
IC=500m A, VCE=10V*  
IC=1A, VCE=10V*  
300  
10  
20  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50m A, VCE=10V  
f=100MHz  
Collector-Base  
Cobo  
VCB=10V, f=1MHz  
Breakdown Voltage  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical Characteristics graphs see FMMT493 datasheet.  
3 - 88  

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