Datasheet > FCX1047ATC

FCX1047ATC

更新时间： 2024-11-05 21:16:51

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美台 - DIODES		/
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3页	51K
描述
Transistor

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中文翻译

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技术参数
数据手册

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FCX1047ATC 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.61
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

FCX1047ATC 数据手册

SOT89 NPN SILICON POWER

FCX1047A

(SWITCHING) TRANSISTOR

ISSSUE 2 - DECEMBER 1998

FEATURES

2W POWER DISSIPATION

20A Peak Pulse Current

Excellent H_FECharacteristics up to 20 Amps

Extremely Low Saturation Voltage E.g. 25mv Typ.

Extremely Low Equivalent On-resistance;

R_CE(sat)40mΩ at 4A

Complimentary Type -

Partmarking Detail -

FCX1147A

047

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current **

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

1 †

2 ‡

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

†

‡

recommended P_totcalculated using FR4 measuring 15x15x0.6mm

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

12 3

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