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FCX1051A PDF预览

FCX1051A

更新时间: 2024-11-21 06:59:03
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管
页数 文件大小 规格书
2页 52K
描述
NPN Silicon Power Switching Transistor

FCX1051A 数据手册

 浏览型号FCX1051A的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Silicon Power Switching Transistor  
FCX1051A  
Features  
2W power dissipation.  
10A peak pulse current.  
Excellent HFE characteristics up to 10 Amps.  
Extremely low saturation voltage E.g. 17mv Typ.  
Extremely low equivalent on-resistance.  
RCE(sat) 57mÙ at 3A.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
150  
40  
5
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
10  
A
Peak pulse current  
IC  
3
A
Power dissipation  
Ptot  
1
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  

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