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FCX1151A PDF预览

FCX1151A

更新时间: 2024-11-04 22:31:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管
页数 文件大小 规格书
3页 53K
描述
PNP SILICON POWER (SWITCHING) TRANSISTOR

FCX1151A 数据手册

 浏览型号FCX1151A的Datasheet PDF文件第2页浏览型号FCX1151A的Datasheet PDF文件第3页 
SOT89 PNP SILICON POWER  
FCX1151A  
(SWITCHING) TRANSISTOR  
ISSUE 1 - NOVEMBER 1998  
FEATURES  
*
*
*
*
*
2W POWER DISSIPATION  
5A Peak Pulse Current  
Excellent HFE Characteristics up to 5 Amps  
Extremely Low Saturation Voltage E.g. 60mv Typ.  
Extremely Low Equivalent On-resistance;  
RCE(sat) 66mat 3A  
C
E
C
Complimentary Type -  
Partmarking Detail -  
FCX1051A  
151  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-45  
-40  
-5  
V
V
Peak Pulse Current **  
-5  
A
Continuous Collector Current  
Base Current  
IC  
-3  
A
IB  
-500  
mA  
Power Dissipation at Tamb=25°C  
Ptot  
1 †  
2 ‡  
W
W
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
recommended Ptot calculated using FR4 measuring 15x15x0.6mm  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by  
other suppliers.  
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices  
Refer to the handling instructions for soldering surface mount components.  

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