Datasheet > FCX1151A

FCX1151A

更新时间： 2024-09-16 06:59:03

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管
页数	文件大小	规格书
2页	53K
描述
PNP Silicon Power Switching Transistor

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数据手册

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FCX1151A 数据手册

SMD Type

Transistors

PNP Silicon Power Switching Transistor

FCX1151A

Features

2W power dissipation.

5A peak pulse current.

Excellent HFE characteristics up to 5 Amps.

Extremely low saturation voltage E.g. 60mv Typ.

Extremely low equivalent on-resistance.

R^CE(sat)66mÙ at 3A.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

-45

-40

-5

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

-5

Peak pulse current *3

Base current

I^C

I^B

-3

-500

1 *1

Power dissipation

P^tot

2 *2

Operating and storage temperature range

T^j,Tstg

-55 to +150

*1 recommended Ptot calculated using FR4 measuring 15X15X0.6mm

*2 Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40X40X0.6mm

*3 Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%

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