5秒后页面跳转
FC654601 PDF预览

FC654601

更新时间: 2024-11-05 10:31:27
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 506K
描述
Silicon N-channel MOS FET

FC654601 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FC654601 数据手册

 浏览型号FC654601的Datasheet PDF文件第2页浏览型号FC654601的Datasheet PDF文件第3页浏览型号FC654601的Datasheet PDF文件第4页浏览型号FC654601的Datasheet PDF文件第5页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
FC654601  
Silicon N-channel MOS FET  
For switching circuits  
Overview  
Package  
FC654601 is N-channel dual type small signal MOS FET employed small size  
surface mounting package.  
Code  
SMini6-F3-B  
Pin Name  
1: Source (FET1)  
2: Gate (FET1)  
3: Drain (FET2)  
Features  
4: Source (FET2)  
5: Gate (FET2)  
6: Drain (FET1)  
Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V)  
High-speed switching  
Small size surface mounting package: SMini6-F3-B  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Marking Symbol: V6  
Internal Connection  
Packaging  
(D1) (G2)  
(S2)  
4
6
5
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
FET1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Rating  
60  
Unit  
V
FET2  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
1
2
3
(S1)  
(G1) (D2)  
V
±12  
FET1  
FET2  
100  
mA  
mA  
mW  
°C  
Peak drain current  
IDP  
200  
Total power dissipation  
PT  
150  
Overall Channel temperature  
Storage temperature  
T
ch  
150  
T
stg  
–55 to +150  
°C  
Publication date: January 2011  
Ver. AED  
1

与FC654601相关器件

型号 品牌 获取价格 描述 数据表
FC6-6-3 PANDUIT

获取价格

QuickNet MTP Fiber Optic Cassettes
FC681374V ETC

获取价格

3.5mm VERTICAL JACK SOCKET
FC681375V ETC

获取价格

3.5mm VERTICAL JACK SOCKET
FC681375VH ETC

获取价格

3.5mm VERTICAL JACK SOCKET
FC694301 PANASONIC

获取价格

Silicon N-channel MOS FET
FC6943010R PANASONIC

获取价格

Dual N-channel MOS FET
FC694308ER PANASONIC

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
FC694309ER PANASONIC

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
FC694601 PANASONIC

获取价格

Silicon N-channel MOS FET
FC6946010R PANASONIC

获取价格

Dual N-channel MOS FET For switching