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FC654601 PDF预览

FC654601

更新时间: 2024-11-06 10:31:27
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 506K
描述
Silicon N-channel MOS FET

FC654601 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FC654601 数据手册

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This product complies with the RoHS Directive (EU 2002/95/EC).  
FC654601  
Silicon N-channel MOS FET  
For switching circuits  
Overview  
Package  
FC654601 is N-channel dual type small signal MOS FET employed small size  
surface mounting package.  
Code  
SMini6-F3-B  
Pin Name  
1: Source (FET1)  
2: Gate (FET1)  
3: Drain (FET2)  
Features  
4: Source (FET2)  
5: Gate (FET2)  
6: Drain (FET1)  
Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V)  
High-speed switching  
Small size surface mounting package: SMini6-F3-B  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Marking Symbol: V6  
Internal Connection  
Packaging  
(D1) (G2)  
(S2)  
4
6
5
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
FET1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Rating  
60  
Unit  
V
FET2  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
1
2
3
(S1)  
(G1) (D2)  
V
±12  
FET1  
FET2  
100  
mA  
mA  
mW  
°C  
Peak drain current  
IDP  
200  
Total power dissipation  
PT  
150  
Overall Channel temperature  
Storage temperature  
T
ch  
150  
T
stg  
–55 to +150  
°C  
Publication date: January 2011  
Ver. AED  
1

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