5秒后页面跳转
FC6943010R PDF预览

FC6943010R

更新时间: 2024-11-05 12:05:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
7页 367K
描述
Dual N-channel MOS FET

FC6943010R 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SC-107C, 6 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:1.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:154076Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SO Transistor Flat Lead
Samacsys Footprint Name:FC6943010RSamacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.125 W
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FC6943010R 数据手册

 浏览型号FC6943010R的Datasheet PDF文件第2页浏览型号FC6943010R的Datasheet PDF文件第3页浏览型号FC6943010R的Datasheet PDF文件第4页浏览型号FC6943010R的Datasheet PDF文件第5页浏览型号FC6943010R的Datasheet PDF文件第6页浏览型号FC6943010R的Datasheet PDF文件第7页 
Doc No. TT4-EA-12578  
Revision. 2  
MOS FET  
FC6943010R  
FC6943010R  
Dual N-channel MOS FET  
Unit : mm  
1.6  
For switching  
0.2  
0.13  
6
5
4
Features  
Low drive voltage: 2.5 V drive  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)  
1
2
3
(0.6)  
Marking Symbol :  
V4  
(0.5)(0.5)  
1.0  
Basic Part Number : Dual FK330301 (Individual)  
1. Source(FET1) 4. Source(FET2)  
2. Gate(FET1)  
3. Drain(FET2)  
5. Gate(FET2)  
6. Drain(FET1)  
Packaging  
Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)  
Panasonic  
JEITA  
SSMini6-F3-B  
SC-107C  
Code  
SOT-666  
Absolute Maximum Ratings Ta = 25C  
Internal Connection  
Parameter  
Drain-source Voltage  
Gate-source Voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
30  
12  
100  
200  
Unit  
V
V
mA  
mA  
mW  
C  
(D1) (G2)  
(S2)  
FET1  
FET2  
6
5
4
Pulse drain current  
IDp  
PT  
Tch  
Topr  
Tstg  
FET1  
Total power dissipation  
Channel temperature  
Operating ambient temperature  
Storage temperature  
125  
150  
-40 to +85  
-55 to +150  
Overall  
C  
C  
FET2  
1
2
3
(S1)  
(G1) (D2)  
Pin name  
1. Source(FET1) 4. Source(FET2)  
2. Gate(FET1)  
3. Drain(FET2)  
5. Gate(FET2)  
6. Drain(FET1)  
Page 1 of 6  
Established : 2010-05-17  
Revised : 2013-07-01  

与FC6943010R相关器件

型号 品牌 获取价格 描述 数据表
FC694308ER PANASONIC

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
FC694309ER PANASONIC

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
FC694601 PANASONIC

获取价格

Silicon N-channel MOS FET
FC6946010R PANASONIC

获取价格

Dual N-channel MOS FET For switching
FC6ASBBLM24.576-BULK FOX

获取价格

Parallel - Fundamental Quartz Crystal,
FC6ASBBMD9.84375 FOX

获取价格

Parallel - Fundamental Quartz Crystal, 9.84375MHz Nom, SMD, 2 PIN
FC6ASBCLF40.0 FOX

获取价格

Parallel - Fundamental Quartz Crystal, 40MHz Nom, SMD, 2 PIN
FC6ASBCMD67.0 FOX

获取价格

Parallel - 3Rd Overtone Quartz Crystal, 67MHz Nom, SMD, 2 PIN
FC6ASBDMD9.84375 FOX

获取价格

Parallel - Fundamental Quartz Crystal, 9.84375MHz Nom, SMD, 2 PIN
FC6ASCBMD9.84375 FOX

获取价格

Parallel - Fundamental Quartz Crystal, 9.84375MHz Nom, SMD, 2 PIN