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FC694309ER PDF预览

FC694309ER

更新时间: 2024-11-06 20:49:19
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
7页 323K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN

FC694309ER 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SC-107C, 6 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.125 W
子类别:FET General Purpose Powers表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FC694309ER 数据手册

 浏览型号FC694309ER的Datasheet PDF文件第2页浏览型号FC694309ER的Datasheet PDF文件第3页浏览型号FC694309ER的Datasheet PDF文件第4页浏览型号FC694309ER的Datasheet PDF文件第5页浏览型号FC694309ER的Datasheet PDF文件第6页浏览型号FC694309ER的Datasheet PDF文件第7页 
Doc No. TT4-EA-14543  
Revision. 2  
MOS FET  
FC694309ER  
FC694309ER  
Dual N-channel MOSFET  
Unit : mm  
For switching circuits  
1.6  
0.2  
0.13  
6
5
4
Features  
Low drive voltage : 1.5 V drive  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)  
1
2
3
(0.6)  
Marking Symbol :  
Basic Part Number  
X9  
(0.5)(0.5)  
1.0  
Dual FK330309 (Individual)  
1. Source(FET1) 4. Source(FET2)  
2. Gate(FET1) 5. Gate(FET2)  
3. Drain(FET2) 6. Drain(FET1)  
Packaging  
Embossed type (Thermo-compression sealing) : 8 000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25 C  
Panasonic  
JEITA  
SSMini6-F3-B  
SC-107C  
SOT-666  
Parameter  
Symbol  
VDS  
VGS  
ID  
Rating  
30  
6  
100  
200  
Unit  
V
V
mA  
mA  
mW  
C  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Drain Current (Pulsed) *1  
Total Power Dissipation  
Code  
FET1  
FET2  
IDp  
PD  
Tch  
Tstg  
Internal Connection  
125  
150  
-55 to +150  
6
5
4
Overall Channel Temperature  
Storage Temperature Range  
C  
FET 1  
Note *1  
Pulse test: Ensure that the channel temperature does not exceed 150 C  
FET 2  
3
1
2
Pin Name  
1. Source(FET1) 4. Source(FET2)  
2. Gate(FET1) 5. Gate(FET2)  
3. Drain(FET2) 6. Drain(FET1)  
Page 1 of 6  
Established : 2013-02-19  
Revised : 2013-02-27  

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