是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
F3L50R06W1E3-B11 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-20 | |
F3L600R10W4S7F_C22 | INFINEON |
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PressFIT | |
F3L75R07W2E3_B11 | INFINEON |
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EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / | |
F3L75R07W2E3-B11 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, MODULE-27 | |
F3L75R07W2E3B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
F3L75R12W1H3_B11 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
F3L75R12W1H3_B27 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
F3L75R12W1H3B11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-21 | |
F3L75R12W1H3B27BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-21 | |
F3L8MR12W2M1HP_B11 | INFINEON |
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TIM,PressFIT |