VS-ETH0806-M3, VS-ETH0806FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS
• True 2 pin package
)
2L TO-220AC
2L TO-220 FULL-PAK
Base
cathode
2
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
1
3
1
2
DESCRIPTION/APPLICATIONS
Cathode
Anode
Cathode
Anode
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
VS-ETH0806-M3
VS-ETH0806FP-M3
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
Package
2L TO-220AC, 2L TO-220FP
IF(AV)
8 A
600 V
VR
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
VF at IF
2.65 V
16 ns
trr (typ.)
TJ max.
Diode variation
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
600
V
TC = 146 °C
C = 114 °C
TJ = 25 °C
Average rectified forward current in DC
IF(AV)
8
FULL-PAK
T
A
Non-repetitive peak surge current
IFSM
80
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
V
-
-
-
-
-
-
2.0
1.3
0.02
15
6
2.65
1.85
12
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
100
-
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8
-
Document Number: 93515
Revision: 10-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000