Datasheet > ETH3006FP-M3

ETH3006FP-M3

更新时间： 2024-09-18 10:16:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	197K
描述
Hyperfast Rectifier, 30 A FRED Pt

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ETH3006FP-M3 数据手册

VS-ETH3006-M3, VS-ETH3006FP-M3

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

• Hyperfast soft recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Fully isolated package (V_INS= 2500 V_RMS

• True 2 pin package

)

2L TO-220AC

2L TO-220 FULL-PAK

Base

cathode

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Designed and qualified according to JEDEC-JESD47

DESCRIPTION/APPLICATIONS

Cathode

Anode

Cathode

Anode

Hyperfast recovery rectifiers designed with optimized

performance of forward voltage drop, hyperfast recovery

time, and soft recovery.

VS-ETH3006-M3

VS-ETH3006FP-M3

PRODUCT SUMMARY

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

Package

2L TO-220AC, 2L TO-220FP

I_F(AV)

30 A

600 V

V_R

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

V_Fat I_F

2.65 V

27 ns

t_rr(typ.)

T_Jmax.

Diode variation

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

600

T_C= 131 °C

_C= 51 °C

T_J= 25 °C

Average rectified forward current in DC

I_F(AV)

FULL-PAK

Non-repetitive peak surge current

I_FSM

180

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.0

1.4

0.02

2.65

1.8

300

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Document Number: 93523

Revision: 18-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与ETH3006FP-M3相关器件

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