Datasheet > ETH3006STRL-M3

ETH3006STRL-M3

更新时间： 2024-09-18 10:16:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	194K
描述
Hyperfast Rectifier, 30 A FRED Pt

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ETH3006STRL-M3 数据手册

New Product

VS-ETH3006S-M3, VS-ETH3006-1-M3

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

VS-ETH3006S-M3

VS-ETH3006-1-M3

• Compliant to RoHS Directive 2002/95/EC

Base

cathode

• Halogen-free according to IEC 61249-2-21

definition

• Designed and qualified according to JEDEC-JESD47

DESCRIPTION/APPLICATIONS

Anode

N/C

Hyperfast recovery rectifiers designed with optimized

performance of forward voltage drop, hyperfast recovery

time, and soft recovery.

N/C

Anode

D²PAK

TO-262

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

PRODUCT SUMMARY

These devices are intended for use in PFC Boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

Package

TO-263AB (D²PAK), TO-262AA

I_F(AV)

30 A

600 V

V_R

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

V_Fat I_F

2.65 V

27 ns

t_rr(typ.)

T_Jmax.

Diode variation

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

T_C= 95 °C

T_C= 25 °C

I_FSM

180

Operating junction and storage

temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.0

1.4

0.02

2.65

1.8

300

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Document Number: 93574

Revision: 21-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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