New Product
VS-ETH1506S-M3, VS-ETH1506-1-M3
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
VS-ETH1506S-M3
VS-ETH1506-1-M3
• Compliant to RoHS Directive 2002/95/EC
Base
cathode
2
• Halogen-free according to IEC 61249-2-21
definition
2
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
3
1
N/C
3
1
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
N/C
Anode
Anode
D2PAK
TO-262
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
15 A
600 V
VR
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VF at IF
2.45 V
21 ns
trr (typ.)
TJ max.
Diode variation
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
600
15
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
V
IF(AV)
TC = 139 °C
TC = 25 °C
A
IFSM
160
Operating junction and storage
temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 15A
600
-
-
V
-
-
-
-
-
-
1.8
1.25
0.01
20
2.45
1.6
15
200
-
Forward voltage
VF
IR
IF = 15 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
12
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Document Number: 93573
Revision: 21-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000