Datasheet > ESD7102

ESD7102

更新时间： 2022-02-26 14:02:35

品牌	Logo	应用领域
安森美 - ONSEMI		微控制器
页数	文件大小	规格书
6页	437K
描述
null8-bit Withstand Voltage Microcontroller

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数据手册

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ESD7102 数据手册

ESD7102, SZESD7102

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working

Voltage

RWM

I/O Pin to GND

Breakdown Voltage

I = 1 mA, I/O Pin to GND

16.5

Reverse Leakage

Current

RWM

= 5 V, I/O Pin to GND

Clamping Voltage

(Note 1)

IEC61000−4−2, 8 kV Contact

See Figures 3 and 4

Clamping Voltage TLP

(Note 2)

= 8 A

= 16 A

= −8 A

= −16 A

−5.5

−10.8

Junction Capacitance

Match

VR = 0 V, f = 1 MHz between I/O1 to GND and I/O

2 to GND

Junction Capacitance

3dB Bandwidth

VR = 0 V, f = 1 MHz between I/O Pins

0.2

0.3

0.4

0.5

VR = 0 V, f = 1 MHz between I/O Pins and GND

R = 50 W

GHz

1. For test procedure see Figures 5 and 6 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1E−02

1E−03

1E−04

1E−05

1E−06

1E−07

1E−08

1E−09

1E−10

1E−11

1E−12

1E−13

10 12 14 16 18 20 22 24

VOLTAGE (V)

VBias (V)

Figure 1. Typical IV Characteristic Curve

Figure 2. Typical CV Characteristic Curve

150

140

130

120

110

100

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

−110

−120

−130

−140

−150

TBD

−50

100 150 200 250 300 350 400

TIME (ns)

−20

20 40 60 80 100 120 140 160 180 200

TIME (ns)

Figure 3. IEC61000−4−2 +8 kV Contact ESD

Clamping Voltage

Figure 4. IEC61000−4−2 −8 kV Contact ESD

Clamping Voltage

www.onsemi.com

123 4 5 6

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