ESD7181, SZESD7181
Low Capacitance ESD
Protection Diodes
Micro−package Diodes for ESD Protection
The ESD7181 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, low leakage,
and fast response time make these parts ideal for ESD protection on
designs where board space is at a premium. It has industry leading
capacitance linearity over voltage making it ideal for RF applications.
http://onsemi.com
1
2
Features
MARKING
DIAGRAM
• Low Capacitance 0.3 pF (Typical)
• Low Clamping Voltage
• Small Body Outline Dimensions: (0.62 x 0.32 mm) − 0201
• Low Body Height: 0.3 mm
PIN 1
2 M
X3DFN2
CASE 152AF
• Working Voltage: 18.5 V
• Low Leakage < 1 nA (Typical)
• Low Insertion Loss
2
= Specific Device Code
= Date Code
M
• Low Dynamic Resistance: < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
*Date Code orientation and/or position may vary de-
pending upon manufacturing location.
ORDERING INFORMATION
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
†
Device
Package
Shipping
Compliant
ESD7181MUT5G
X3DFN2
(Pb−Free)
15000 / Tape &
Reel
Typical Applications
• RF Signal ESD Protection
• Wireless Charger
SZESD7181MUT5G X3DFN2
(Pb−Free)
15000 / Tape &
Reel
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
15
Unit
kV
kV
A
IEC 61000−4−2 (ESD) (Note 1) Air
IEC 61000−4−2 (ESD) (Note 1) Contact
IEC 61000−4−5 (ESD) (Note 2)
12
1
Total Power Dissipation (Note 3) @ T = 25°C
°P °
250
400
mW
°C/W
A
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
3. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2014 − Rev. 4
ESD7181MU/D