Datasheet > ES1M

ES1M

更新时间： 2024-04-09 18:58:45

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	86K
描述
Fast / Super Fast Recovery Rectifiers

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数据手册

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ES1M 数据手册

TH09/2479

IATF 0113686

TH97/2478

SGS TH07/1033

RATING AND CHARACTERISTIC CURVES ( ES1K - ES1M )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Trr

50 Ω

10 Ω

+ 0.5 A

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

- 0.25 A

50 Vdc

(approx)

1 Ω

OSCILLOSCOPE

( NOTE 1 )

- 1.0 A

SET TIME BASE FOR 15 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

1 cm

FIG.2 - DERATING CURVE FOR OUTPUT

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

RECTIFIED CURRENT

1.0

0.8

8.3 ms SINGLE HALF SINE WAVE

0.6

0.4

0.2

Ta = 50 °C

60Hz RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

60 100

NUMBER OF CYCLES AT 60Hz

AMBIENT TEMPERATURE, ( °C)

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

PulseWidth= 300μs

2% Duty Cycle

TJ = 100 °C

TJ = 25 °C

1.0

ES1K - ES1M

0.1

1.0

TJ = 25 °C

0.01

0.1

120

100

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 03 : May 3, 2011

中文翻译

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ES1ME-TP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC,
ES1ME-TP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, SAME, 2 PIN
ES1M-G	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
ES1MM	ETC	获取价格	Surface Mount Ultrafast Plastic Rectifier
ES1M-T	MCC	获取价格	Rectifier Diode,
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