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ES1DBF2 PDF预览

ES1DBF2

更新时间: 2024-10-30 19:53:07
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
5页 443K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

ES1DBF2 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:SMB, 2 PINReach Compliance Code:unknown
风险等级:5.55Is Samacsys:N
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ES1DBF2 数据手册

 浏览型号ES1DBF2的Datasheet PDF文件第2页浏览型号ES1DBF2的Datasheet PDF文件第3页浏览型号ES1DBF2的Datasheet PDF文件第4页浏览型号ES1DBF2的Datasheet PDF文件第5页 
RoHS  
ES1AB THRU ES1KB  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
Low profile package  
● Ideal for automated placement  
Glass passivated chip junction  
● High forward surge capability  
Super Fast reverse recovery time  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer and telecommunication.  
Mechanical Data  
ackage: DO-214AA (SMB  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
PARAMETER  
SYMBOL  
UNIT  
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
Device marking code  
V
V
A
50  
100  
150  
200  
300  
1.0  
400  
500  
600  
800  
Repetitive peak reverse voltage  
RRM  
Average rectified output current  
@60Hz sine wave, resistance load,  
TL (Fig.1)  
I
O
Surge(non-repetitive)forward current  
@60Hz half-sine wave,1 cycle, Ta=25  
I
A
30  
FSM  
T
-55~+150  
-55~+150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
PARAMETER  
SYMBOL  
UNIT  
V
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=1.0A  
FM  
0.95  
1.3  
1.7  
1.85  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
t
rr  
ns  
35  
T =25℃  
5.0  
a
Maximum DC reverse current at  
rated DC blocking voltage per  
diode @ VRM=VRRM  
I
μA  
RRM  
T =125℃  
a
100  
1 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S784  
Rev. 2.2,06-Jun-16  
www.21yangjie.com  

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