Datasheet > ES1DFF

ES1DFF

更新时间： 2024-11-29 14:53:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	242K
描述
快恢复整流管

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中文翻译

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数据手册

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ES1DFF 数据手册

ES1AFF THRU ES1JFF

Surface Mount Superfast Recovery Rectifiers

Reverse Voltage - 50 to 600 V

Forward Current - 1 A

PINNING

DESCRIPTION

Cathode

Features

• Glass passivated chip juntion

• For surface mounted applications

• Low profile package

Anode

• Superfast reverse recovery time

Top view

Plastic Package : SMAF

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For

capacitive load, derate current by 20%.

ES1A ES1B ES1C ES1D ES1E ES1G ES1J

Parameter

Symbols

V_RRM

V_RMS

V_DC

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100 150 200 300 400 600

70 105 140 210 280 420

Maximum DC Blocking Voltage

100 150 200 300 400 600

I_F(AV)

Maximum Average Forward Rectified Current T_C= 125℃

Peak Forward Surge Current 8.3 ms Single Half Sine

Wave Superimposed on Rated Load (JEDEC Method)

I_FSM

V_F

I_R

Maximum Forward Voltage at 1 A

1.25

1.65

Maximum Reverse Current

at T_J= 25℃

100

µA

at Rated DC Blocking Voltage

at T_J= 125℃

Typical Junction Capacitance at V_R= 4 V, f = 1 MH_Z

C_J

Maximum Reverse Recovery Time

at I_F= 0.5 A, I_R= 1 A, I_rr= 0.25 A

t_rr

Typical Thermal Resistance ¹⁾

℃/W

R_θJA

Operating Junction and Storage Temperature Range

¹⁾P.C.B. mounted with 2.0" X 2.0" ( 5 X 5 cm) copper pad areas.

T_j,T_stg

- 55 to + 150

℃

1 / 4

Dated :21/09/2023 Rev : 01

12 3 4

中文翻译

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ES1D-F-Q1	ANBON	获取价格	SMAF
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ES1D-G	WEITRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
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ES1DG-SMA-R	UTC	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1D-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
ES1DHE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, LEAD FREE, PLASTIC, SMA, 2
ES1D-HE3	VISHAY	获取价格	暂无描述