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ES1DG

更新时间: 2024-11-29 01:24:47
品牌 Logo 应用领域
辰达行 - MDD 超快速恢复二极管
页数 文件大小 规格书
3页 763K
描述
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

ES1DG 数据手册

 浏览型号ES1DG的Datasheet PDF文件第2页浏览型号ES1DG的Datasheet PDF文件第3页 
ES1AG THRU ES1JG  
Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere  
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER  
DO-214AC/SMA  
Features  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
For surface mounted applications  
Low reverse leakage  
0.110(2.80)  
0.094(2.40)  
0.067 (1.70)  
0.051 (1.30)  
Built-in strain relief,ideal for automated  
placement High forward surge current capability  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
0.177(4.50)  
0.157(3.99)  
0.012(0.305)  
0.006(0.152)  
0.096(2.42)  
0.078(1.98)  
Glass passivated chip junction  
0.060(1.52)  
0.030(0.76)  
0.008(0.203)MAX.  
Mechanical Data  
0.208(5.30)  
0.188(4.80)  
Case : JEDEC DO-214AC/SMA Molded plastic body  
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight  
: 0.002 ounce, 0.055 grams  
Maximum Ratings And Electrical Characteristics  
Ratings at 25°C ambient temperature unlss otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
Parameter  
ES1AG ES1BG ES1CG ES1DG ES1EG ES1GG ES1JG  
SYMBOLS  
UNITS  
MDD  
ES1A  
MDD  
ES1B  
MDD  
ES1C  
MDD  
ES1D  
MDD  
ES1E  
MDD  
ES1G  
MDD  
ES1J  
Marking Code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
RMM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
V
Maximum DC blocking voltage  
V
DC  
100  
I
(AV)  
Maximum average forward rectified current  
1.0  
30  
A
A
at TL=55  
Peak forward surge current  
8.3ms single half sine-wave  
superimposed onrated load (JEDEC Method)  
I
FSM  
Maximum instantaneous forward voltage at 1.0A  
V
F
0.95  
1.25  
1.7  
V
I
R
5.0  
100.0  
Maximum DC reverse current  
at rated DCblocking voltage  
T
A
=25  
TA=125  
(NOTE 1)  
μA  
t
rr  
Maximum reverserecovery time  
35  
ns  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
C
J
15.0  
75.0  
pF  
R
JA  
℃/  
W
Operating junction and storage temperature range  
T
J,  
T
STG  
-55 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.P.C.B. mounted with1.0x1.0”(2.54x2.54cm)copperpad areas.  
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
4.The typical data above is for referenceonly.  
DN:T19704A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  

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