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ES1DF-AH PDF预览

ES1DF-AH

更新时间: 2024-10-31 14:53:15
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
3页 162K
描述
快恢复整流管

ES1DF-AH 数据手册

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ES1DF-AH  
Surface Mount Superfast Recovery Rectifier  
Reverse Voltage - 200 V  
Forward Current - 1 A  
PINNING  
Features  
PIN  
1
DESCRIPTION  
Cathode  
• AEC-Q101 Qualified  
• Glass passivated chip juntion  
• For surface mounted applications  
• Low profile package  
Anode  
2
• Superfast reverse recovery time  
• Halogen and Antimony Free(HAF), RoHS compliant  
1
2
Top view  
Plastic Package : SMAF  
Mechanical Data  
Case: SMAF  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Absolute Maximum Ratings and Characteristics  
Ratings at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For  
capacitive load, derate current by 20%.  
Symbols  
Marking  
VRRM  
Value  
.ES1D  
200  
Units  
Parameter  
-
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
A
VRMS  
140  
Maximum DC Blocking Voltage  
VDC  
200  
IF(AV)  
1
Maximum Average Forward Rectified Current TC = 125℃  
Peak Forward Surge Current 8.3 ms Single Half Sine  
Wave Superimposed on Rated Load (JEDEC Method)  
IFSM  
VF  
IR  
30  
1
A
V
Maximum Forward Voltage at 1 A  
Maximum Reverse Current  
at Rated DC Blocking Voltage  
5
100  
at TJ = 25℃  
at TJ = 125℃  
µA  
Typical Junction Capacitance at VR = 4 V, f = 1 MHZ  
CJ  
trr  
15  
35  
pF  
ns  
Maximum Reverse Recovery Time  
at IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
Typical Thermal Resistance 1)  
85  
RθJA  
/W  
Operating Junction and Storage Temperature Range  
1) P.C.B. mounted with 2.0" X 2.0" ( 5 X 5 cm) copper pad areas.  
Tj ,Tstg  
- 55 to + 150  
1 / 3  
®
Dated :23/02/2022 Rev : 01  

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