5秒后页面跳转
ES1D-T1 PDF预览

ES1D-T1

更新时间: 2024-10-31 22:29:55
品牌 Logo 应用领域
WTE 整流二极管
页数 文件大小 规格书
3页 53K
描述
1.0A SURFACE MOUNT SUPER FAST RECTIFIER

ES1D-T1 数据手册

 浏览型号ES1D-T1的Datasheet PDF文件第2页浏览型号ES1D-T1的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
ES1A – ES1J  
1.0A SURFACE MOUNT SUPER FAST RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
B
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Super-Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E  
SMA/DO-214AC  
Mechanical Data  
Dim  
A
Min  
2.50  
4.00  
1.40  
0.152  
4.80  
2.00  
0.051  
0.76  
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: Low Profile Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
C
!
!
!
D
E
Weight: 0.064 grams (approx.)  
F
G
H
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
ES1A  
ES1B  
ES1C  
ES1D  
ES1E  
ES1G  
ES1J Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
1.0  
V
A
Average Rectified Output Current  
@TL = 120°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.95  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
500  
µA  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
trr  
Cj  
35  
10  
nS  
pF  
RJL  
Tj, TSTG  
35  
K/W  
°C  
Operating and Storage Temperature Range  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
ES1A – ES1J  
1 of 3  
© 2002 Won-Top Electronics  

与ES1D-T1相关器件

型号 品牌 获取价格 描述 数据表
ES1D-T3 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
ES1D-T3 WTE

获取价格

1.0A SURFACE MOUNT SUPER FAST RECTIFIER
ES1D-T3-LF WTE

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, S
ES1D-TP MCC

获取价格

1 Amp Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts
ES1DV RECTRON

获取价格

Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 30 A;Forward Vol
ES1DVRX ETC

获取价格

DIODE GEN PURP 200V 1A SOD123W
ES1DW PANJIT

获取价格

SURFACE MOUNT SUPERFAST RECTIFIER
ES1DW SWST

获取价格

快恢复整流管
ES1DW YANGJIE

获取价格

SMA
ES1DW RECTRON

获取价格

Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 25 A;Forward Vol