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ES1E

更新时间: 2024-11-27 22:49:07
品牌 Logo 应用领域
SSE 二极管开关光电二极管
页数 文件大小 规格书
1页 19K
描述
SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER

ES1E 数据手册

  
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
ES1A THRU ES1G  
SURFACE MOUNT SUPER  
TECHNICAL  
SPECIFICATION  
FAST SWITCHING RECTIFIER  
VOLTAGE: 50 TO 400V CURRENT: 1.0A  
FEATURES  
• Ideal for surface mount pick and  
SMA/DO-214AC  
B
place application  
• Low profile package  
A
F
C
• Built-in strain relief  
• High surge capability  
D
• Glass passivated chip  
• Super fast recovery for high efficiency  
• High temperature soldering guaranteed:  
260oC/10sec/at terminal  
H
G
MECHANICAL DATA  
• Terminal: Plated leads solderable per  
A
B
C
D
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)  
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)  
MIL-STD 202E, method 208C  
E
F
G
H
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)  
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Color band denotes cathode  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
RATINGS  
SYMBOL ES1A ES1B ES1C ES1D ES1E ES1G UNITS  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
(TL=110oC)  
100  
IF(AV)  
1.0  
30  
A
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at rated forward current)  
IFSM  
VF  
IR  
A
V
0.95  
1.25  
Ta=25oC  
Ta=100oC  
5.0  
200  
35  
Maximum DC Reverse Current  
µA  
µA  
nS  
pF  
oC/W  
oC  
(at rated DC blocking voltage)  
Maximum Reverse Recovery Time (Note 1)  
trr  
CJ  
10  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
40  
Rθ(ja)  
-50 to +150  
TSTG,TJ  
Storage and Operation Junction Temperature  
Note:  
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.  
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc  
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area  
http://www.sse-diode.com  

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