Datasheet > ES1E

ES1E

更新时间： 2024-09-14 22:49:07

品牌	Logo	应用领域
SSE		二极管开关光电二极管
页数	文件大小	规格书
1页	19K
描述
SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER

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中文翻译

获取价格

数据手册

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ES1E 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

ES1A THRU ES1G

SURFACE MOUNT SUPER

TECHNICAL

SPECIFICATION

FAST SWITCHING RECTIFIER

VOLTAGE: 50 TO 400V CURRENT: 1.0A

FEATURES

• Ideal for surface mount pick and

SMA/DO-214AC

place application

• Low profile package

• Built-in strain relief

• High surge capability

• Glass passivated chip

• Super fast recovery for high efficiency

• High temperature soldering guaranteed:

260^oC/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per

MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)

MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)

MIL-STD 202E, method 208C

MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)

MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

RATINGS

SYMBOL ES1A ES1B ES1C ES1D ES1E ES1G UNITS

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T_L=110^oC)

100

I_F(AV)

1.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

I_FSM

V_F

I_R

0.95

1.25

T_a=25^oC

T_a=100^oC

5.0

200

Maximum DC Reverse Current

µA

^oC/W

^oC

(at rated DC blocking voltage)

Maximum Reverse Recovery Time (Note 1)

trr

C_J

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

R_θ(ja)

-50 to +150

T_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A,Irr=0.25A.

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

http://www.sse-diode.com

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