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ES1E

更新时间: 2024-09-15 03:34:47
品牌 Logo 应用领域
WTE 二极管光电二极管
页数 文件大小 规格书
4页 53K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

ES1E 数据手册

 浏览型号ES1E的Datasheet PDF文件第2页浏览型号ES1E的Datasheet PDF文件第3页浏览型号ES1E的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
ES1A – ES1J  
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
B
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Super-Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E  
SMA/DO-214AC  
Mechanical Data  
Dim  
A
Min  
2.50  
4.00  
1.20  
0.152  
4.80  
2.00  
0.051  
0.76  
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
B
C
!
!
!
!
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.064 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
E
F
G
H
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
ES1A ES1B ES1C ES1D ES1E ES1G ES1J  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
1.0  
V
A
Average Rectified Output Current  
@TL = 120°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.95  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
500  
µA  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
trr  
Cj  
35  
10  
nS  
pF  
RJL  
Tj, TSTG  
35  
°C/W  
°C  
Operating and Storage Temperature Range  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
ES1A – ES1J  
1 of 4  
© 2006 Won-Top Electronics  

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