Datasheet > ES1DV

ES1DV

更新时间： 2024-11-29 18:04:43

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	213K
描述
Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 30 A;Forward Voltage Vf : 0.95 V;Reverse Current Ir : 0.5 uA;Recovery Time : 35 ns;Package / Case : DO-214AC(SMA);Mounting Style : SMD/SMT;Notes : 200 V,1.0 A,35 ns,DO-214AC;Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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数据手册

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ES1DV 数据手册

ES1AV

THRU

ES1JV

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere

FEATURES

* Glass passivated device

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Halogen-free

* P/N suffix V means AEC-Q101 qualified, e.g:ES1AV

DO-214AC

0.067 (1.70 )

0.051 (1.29 )

0.110 ( 2.79 )

0.086 ( 2.18 )

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

* Mounting position: Any

0.180 ( 4.57 )

0.160 ( 4.06 )

* Weight: 0.057 gram

0.012 ( 0.305 )

0.006 ( 0.152 )

0.091 ( 2.31 )

0.067 ( 1.70 )

0.059 ( 1.50 )

0.035 ( 0.89 )

0.008 ( 0.203 )

0.004 ( 0.102 )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Resistive or inductive load.

0.209 ( 5.31 )

0.185 ( 4.70 )

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (@ T

=25 C unless otherwise noted)

RATINGS

SYMBOL

ES1A

ES1B

100

ES1C

150

ES1D

200

ES1E

300

ES1G

ES1J

UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Volts

400

280

400

600

420

600

RRM

105

150

140

200

210

300

RMS

100

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

1.0

Amps

at T = 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

I²T

A²S

Typical Current Square Time

3.7

⁰C/W

Typical Thermal Resistance (Note 4)

Typical Junction Capacitance (Note 2)

⁰C

Operating and Storage Temperature Range

T , T

-55 to + 150

STG

ELECTRICAL CHARACTERISTICS(@T

=25 C unless otherwise noted)

CHARACTERISTICS

SYMBOL

UNITS

ES1A

ES1B

ES1C

ES1D

ES1E

ES1G

ES1J

1.70

Maximum Instantaneous Forward Voltage at 1.0A DC

0.95

1.25

Volts

@T = 25^oC

Amps

0.5

2.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@T = 150^oC

mAmps

nSec

Maximum Reverse Recovery Time (Note 1)

trr

2020-11

REV:O

NOTES : 1. Reverse Recovery Test Conditions: I

2. Measured at 1 MH

3. Thermal Resistance : Mounted on PCB.

= 0.5A, I

= -1.0A, IRR = -0.25A

and applied reverse voltage of 4.0 volts

12 3 4 5 6 7 8

中文翻译

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与ES1DV相关器件

型号	品牌	获取价格	描述	数据表
ES1DVRX	ETC	获取价格	DIODE GEN PURP 200V 1A SOD123W
ES1DW	PANJIT	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER
ES1DW	SWST	获取价格	快恢复整流管
ES1DW	YANGJIE	获取价格	SMA
ES1DW	RECTRON	获取价格	Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 25 A;Forward Vol
ES1D-W	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1DWF-HF	COMCHIP	获取价格	Rectifier Diode,
ES1DWG	PANJIT	获取价格	SMA(W)
ES1DWV	RECTRON	获取价格	Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 25 A;Forward Vol
ES1E	CHENG-YI	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER

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