Datasheet > ES1DVRX

ES1DVRX

更新时间： 2024-11-01 22:55:03

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描述
DIODE GEN PURP 200V 1A SOD123W

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中文翻译

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ES1DVRX 数据手册

ES1DVR

200 V, 1 A hyperfast PN-rectifier

28 March 2018

Product data sheet

1. General description

High power density, hyperfast PN-rectifier with high-efficiency planar technology, encapsulated in a

small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Reverse voltage V_R≤ 200 V

•

Forward current I_F≤ 1 A

Hyperfast recovery time t_rr≤ 25 ns

Pt doped life time control

Low inductance

Small and flat lead SMD plastic package

Package height typ. 1 mm

High power capability due to clip-bond technology

Planar die design

Capable for reflow and wave soldering

3. Applications

•

General-purpose rectification

Reverse polarity protection

Hyperfast switching

Freewheeling applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

145 °C

≤

V_RRM

repetitive peak reverse T_j= 25 °C

voltage

200

V_R

V_F

reverse voltage

200

875

750

200

forward voltage

reverse current

I_F= 1 A; pulsed; T_j= 25 °C

[1]

820

675

µA

I_F= 1 A; pulsed; T_j= 125 °C

V_R= 200 V; pulsed; T_j= 25 °C

V_R= 200 V; pulsed; T_j= 125 °C

I_R

1.5

[1] Very short test pulse to keep the junction temperature unchanged.

12 3 4 5 6 7...14

中文翻译

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