ES1D-T3

更新时间： 2024-01-24 03:31:35

品牌	Logo	应用领域
WTE		二极管光电二极管瞄准线
页数	文件大小	规格书
3页	53K
描述
1.0A SURFACE MOUNT SUPER FAST RECTIFIER

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数据手册

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ES1D-T3 数据手册

WTE

POWER SEMICONDUCTORS

ES1A – ES1J

1.0A SURFACE MOUNT SUPER FAST RECTIFIER

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Low Power Loss

Super-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMA/DO-214AC

Mechanical Data

Dim

Min

2.50

4.00

1.40

0.152

4.80

2.00

0.051

0.76

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: Low Profile Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

ES1A

ES1B

ES1C

ES1D

ES1E

ES1G

ES1J Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

105

200

300

210

400

280

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

140

1.0

Average Rectified Output Current

@T_L= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.95

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

K/W

°C

Operating and Storage Temperature Range

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

ES1A – ES1J

1 of 3

12 3

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