Datasheet > ER1000CT_09

ER1000CT_09

更新时间： 2024-09-19 12:50:03

品牌	Logo	应用领域
强茂 - PANJIT		整流二极管快速恢复二极管
页数	文件大小	规格书
2页	85K
描述
SUPERFAST RECOVERY RECTIFIERS

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中文翻译

获取价格

数据手册

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ER1000CT_09 数据手册

ER1000CT~ER1006CT

SUPERFAST RECOVERY RECTIFIERS

50 to 600 Volts

10 Amperes

VOLTAGE

FEATURES

CURRENT

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Super fast recovery times, high voltage.

• In compliance with EU RoHS 2002/95/EC directives

.058(1.47)

.042(1.07)

MECHANICALDATA

• Case: TO-220AB Molded plastic

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859grams.

MAXIMUMRATINGANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

ER1000CT ER1001CT ER1001ACT ER1002CT ER1003CT ER1004CT ER1006CT

PARAMETER

SYMBOL

V_RRM

UNITS

Maximum Recurrent Peak Reverse Voltage

100

150

105

150

200

140

200

10.0

150

300

210

300

400

280

400

600

420

600

Maximum RMS Voltage

V_RMS

V_DC

I_F(AV)

I_FSM

V_F

Maximum DC Blocking Voltage

100

Maximum Average Forward Current at Tc =100^O

Peak Forward Surge Current, 8.3ms single half sine-wave

superimposed on rated load(JEDEC method)

Maximum Forward Voltage at 5A, per element

0.95

1.30

1.7

Maximum DC Reverse Current at T_J=25^O

Rated DC Blocking VoltageT_J=100^O

1.0

500

µA

I_R

Maximum Reverse Recovery Time (Note 2)

Typical Junction capacitance (Note 1)

Typical Thermal Resistance

t_rr

C_J

3.0

^OC

R_θJC

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

^OC

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.

3. Both Bonding and Chip structure are available.

PAGE . 1

STAD-MAR.06.2009

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