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EP1M120F484C6 PDF预览

EP1M120F484C6

更新时间: 2024-11-02 14:49:59
品牌 Logo 应用领域
阿尔特拉 - ALTERA LTE输入元件可编程逻辑
页数 文件大小 规格书
86页 536K
描述
Loadable PLD, CMOS, PBGA484, FINE LINE, BGA-484

EP1M120F484C6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:BGA
包装说明:FINE LINE, BGA-484针数:484
Reach Compliance Code:not_compliantECCN代码:3A991
HTS代码:8542.39.00.01风险等级:5.26
JESD-30 代码:S-PBGA-B484JESD-609代码:e0
长度:23 mm湿度敏感等级:3
专用输入次数:I/O 线路数量:303
输入次数:303逻辑单元数量:4800
输出次数:303端子数量:484
最高工作温度:85 °C最低工作温度:
组织:0 DEDICATED INPUTS, 303 I/O输出函数:MIXED
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA484,22X22,40封装形状:SQUARE
封装形式:GRID ARRAY峰值回流温度(摄氏度):220
电源:1.5/3.3,1.8 V可编程逻辑类型:LOADABLE PLD
认证状态:Not Qualified座面最大高度:2.1 mm
子类别:Field Programmable Gate Arrays最大供电电压:1.89 V
最小供电电压:1.71 V标称供电电压:1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn63Pb37)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:23 mmBase Number Matches:1

EP1M120F484C6 数据手册

 浏览型号EP1M120F484C6的Datasheet PDF文件第2页浏览型号EP1M120F484C6的Datasheet PDF文件第3页浏览型号EP1M120F484C6的Datasheet PDF文件第4页浏览型号EP1M120F484C6的Datasheet PDF文件第5页浏览型号EP1M120F484C6的Datasheet PDF文件第6页浏览型号EP1M120F484C6的Datasheet PDF文件第7页 
Mercury  
Programmable Logic  
Device Family  
®
January 2003, ver. 2.2  
Data Sheet  
High-performance programmable logic device (PLD) family (see  
Table 1)  
Features…  
Integrated high-speed transceivers with support for clock data  
recovery (CDR) at up to 1.25 gigabits per second (Gbps)  
Look-up table (LUT)-based architecture optimized for high  
speed  
Advanced interconnect structure for fast routing of critical paths  
Enhanced I/ O structure for versatile standards and interface  
support  
Up to 14,400 logic elements (LEs)  
System-level features  
Up to four general-purpose phase-locked loops (PLLs) with  
programmable multiplication and delay shifting  
Up to 12 PLL output ports  
Dedicated multiplier circuitry for high-speed implementation of  
signed or unsigned multiplication up to 16 × 16  
Embedded system blocks (ESBs) used to implement memory  
functions including quad-port RAM, true dual-port RAM, first-  
in first-out (FIFO) buffers, and content-addressable memory  
(CAM)  
13  
Each ESB contains 4,096 bits and can be split and used as two  
2,048-bit unidirectional dual-port RAM blocks  
Table 1. Mercury Device Features  
Feature  
EP1M120  
EP1M350  
Typical gates  
HSDI channels  
LEs  
120,000  
8
350,000  
18  
4,800  
12  
14,400  
28  
ESBs (1)  
Maximum RAM bits  
Maximum user I/O pins  
49,152  
303  
114,688  
486  
Note to Table 1:  
(1) Each ESB can be used for two dual- or single-port RAM blocks.  
Altera Corporation  
1
DS-MERCURY-2.2  

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