5秒后页面跳转
EMD08N06E PDF预览

EMD08N06E

更新时间: 2024-12-01 17:15:15
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 248K
描述
TO220-3

EMD08N06E 数据手册

 浏览型号EMD08N06E的Datasheet PDF文件第2页浏览型号EMD08N06E的Datasheet PDF文件第3页浏览型号EMD08N06E的Datasheet PDF文件第4页浏览型号EMD08N06E的Datasheet PDF文件第5页浏览型号EMD08N06E的Datasheet PDF文件第6页 
EMD08N06E  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
60V  
8mΩ  
110A  
R
DSON (MAX.)  
ID  
G
S
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
110  
80  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
A
Pulsed Drain Current1  
IDM  
IAS  
380  
60  
Avalanche Current  
L = 0.1mH, IAS=60A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
180  
90  
mJ  
Repetitive Avalanche Energy2  
TC = 25 °C  
166  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
68  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
JunctiontoCase  
JunctiontoAmbient  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
0.75  
UNIT  
°C / W  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2017/9/28ꢀ  
p.1ꢀ  

与EMD08N06E相关器件

型号 品牌 获取价格 描述 数据表
EMD08N10E EXCELLIANCE

获取价格

TO220-3
EMD09N08A EXCELLIANCE

获取价格

TO252-2
EMD09N08E EXCELLIANCE

获取价格

TO220-3
EMD09N08H EXCELLIANCE

获取价格

EDFN5X6
EMD10 CJ

获取价格

SOT-563
EMD108 ETC

获取价格

Analog IC
EMD-108 ETC

获取价格

E-Series Plug-In MIxer 5500 MHz
EMD-108TR ETC

获取价格

E-Series Plug-In MIxer 5500 MHz
EMD10N06A EXCELLIANCE

获取价格

TO252-2
EMD11N15E EXCELLIANCE

获取价格

TO220-3