Datasheet > EMD11N15F

EMD11N15F

更新时间： 2024-12-01 17:15:19

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	360K
描述
TO220F-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMD11N15F 数据手册

EMD11N15F

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

Pin Description:

BVDSS

RDSON (MAX.)

150V

11.5mΩ

45A

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

180

Avalanche Current

L = 0.1mH, ID=30A, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

Repetitive Avalanche Energy²

22.5

T_C= 25 °C

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

3.0

°C / W

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³Pulsed drain current rating is package limited.

2022/12/19

p.1

12 3 4 5 6

中文翻译

下载PDF

与EMD11N15F相关器件

型号	品牌	获取价格	描述	数据表
EMD11N15FN	EXCELLIANCE	获取价格	TO220F-3
EMD12	ROHM	获取价格	Power management (dual digital transistors)
EMD12	HTSEMI	获取价格	General purpose transistors (dual transistors)
EMD12	CJ	获取价格	SOT-563
EMD12	BL Galaxy Electrical	获取价格	50V,30mA,NPN Bipolar Digital Transistor 50V,30mA,PNP Bipolar Digital Transistor
EMD12164P	EMLSI	获取价格	512M: 32M x 16 Mobile DDR SDRAM
EMD12164P-60	EMLSI	获取价格	512M: 32M x 16 Mobile DDR SDRAM
EMD12164P-75	EMLSI	获取价格	512M: 32M x 16 Mobile DDR SDRAM
EMD12324P	EMLSI	获取价格	512M: 16M x 32 Mobile DDR SDRAM
EMD12324P-60	EMLSI	获取价格	512M: 16M x 32 Mobile DDR SDRAM