Datasheet > EMD12

EMD12

更新时间： 2024-11-29 22:30:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
1页	55K
描述
Power management (dual digital transistors)

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EMD12 数据手册

EMD12 / UMD12N

Transistors

Power management

(dual digital transistors)

EMD12 / UMD12N

!External dimensions (Units : mm)

!Features

1) Both the DTA144E and DTC144E in a EMT or UMT

package.

EMD12

( )

1.2

1.6

!Equivalent circuit

(3)

(2)

(1)

ROHM : EMT6

UMD12N

Each lead has same dimensions

(4)

(5)

(6)

1.25

2.1

!Package, marking, and packaging specifications

Type

EMD12

EMT6

D12

UMD12N

UMT6

D12

Package

0.1Min.

Marking

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

Code

T2R

Basic ordering unit (pieces)

8000

3000

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply voltage

VCC

−10

Input voltage

100

Output current

Power dissipation

150(TOTAL)

150

mW ∗1

°C

Junction temperature

Storage temperature

Tstg

−55~

+150

∗1 120mW per element must not be exceeded.

PNP type negative symbols have been omitted

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

−

Max.

0.5

−

Unit

Conditions

I (off)

−

CC=5/−5V, I

=0.3/−0.3V, I

=10/−10mA, I

=5/−5V

CC=50/−50V, V

=5/−5mA, V =5/−5V

CE=10/−10V, I

=100/−100µA

=2/−2mA

=0.5/−0.5mA

Input voltage

I (on)

Output voltage

Input current

O (on)

−

0.3

0.18

0.5

−

µA

−

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

O (off)

=0V

−

32.9

0.8

250

−

61.1

MHz

kΩ

−

=−5/5mA, f=100MHz ∗

−

R2 / R1

1.2

∗Transition frequency of the device. PNP type negative symbols have been omitted

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